Strain-Induced Effects in Advanced MOSFETs

Sverdlov, Viktor.

Strain-Induced Effects in Advanced MOSFETs [recurso electrónico] / by Viktor Sverdlov. - XIV, 252p. 101 illus. online resource. - Computational Microelectronics, 0179-0307 . - Computational Microelectronics, .

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

9783709103821


Engineering.
Electronics.
Engineering.
Electronics and Microelectronics, Instrumentation.

TK7800-8360 TK7874-7874.9

621.381

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