Transport in Metal-Oxide-Semiconductor Structures (Registro nro. 203157)

MARC details
000 -LÍDER
fixed length control field 02746nam a22004695i 4500
001 - NÚMERO DE CONTROL
control field u375277
003 - IDENTIFICADOR DEL NÚMERO DE CONTROL
control field SIRSI
005 - FECHA Y HORA DE LA ULTIMA TRANSACCIÓN
control field 20160812084316.0
007 - CAMPO FIJO DE DESCRIPCIÓN FIJA--INFORMACIÓN GENERAL
fixed length control field cr nn 008mamaa
008 - ELEMENTOS DE LONGITUD FIJA -- INFORMACIÓN GENERAL
fixed length control field 110112s2011 gw | s |||| 0|eng d
020 ## - NÚMERO INTERNACIONAL NORMALIZADO PARA LIBROS
International Standard Book Number 9783642163043
-- 978-3-642-16304-3
040 ## - FUENTE DE CATALOGACIÓN
Transcribing agency MX-MeUAM
050 #4 - SIGNATURA TOPOGRÁFICA DE LA BIBLIOTECA DEL CONGRESO
Classification number TA1750-1750.22
082 04 - NÚMERO DE CLASIFICACIÓN DECIMAL DEWEY
Classification number 620.11295
Edition number 23
082 04 - NÚMERO DE CLASIFICACIÓN DECIMAL DEWEY
Classification number 620.11297
Edition number 23
100 1# - ASIENTO PRINCIPAL--NOMBRE PERSONAL
Personal name Bentarzi, Hamid.
Relator term author.
245 10 - MENCIÓN DE TITULO
Title Transport in Metal-Oxide-Semiconductor Structures
Medium [recurso electrónico] :
Remainder of title Mobile Ions Effects on the Oxide Properties /
Statement of responsibility, etc. by Hamid Bentarzi.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Berlin, Heidelberg :
Name of producer, publisher, distributor, manufacturer Springer Berlin Heidelberg,
Date of production, publication, distribution, manufacture, or copyright notice 2011.
300 ## - DESCRIPCIÓN FÍSICA
Extent XIV, 106 p.
Other physical details online resource.
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
490 1# - MENCIÓN DE SERIE
Series statement Engineering Materials,
International Standard Serial Number 1612-1317
505 0# - NOTA DE CONTENIDO
Formatted contents note Introduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide.
520 ## - NOTA DE RESUMEN, ETC.
Summary, etc. This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
596 ## -
-- 19
650 #0 - ASIENTO SECUNDARIO DE MATERIA - TERMINO TEMÁTICO
Topical term or geographic name as entry element Optical materials.
650 #0 - ASIENTO SECUNDARIO DE MATERIA - TERMINO TEMÁTICO
Topical term or geographic name as entry element Surfaces (Physics).
650 14 - ASIENTO SECUNDARIO DE MATERIA - TERMINO TEMÁTICO
Topical term or geographic name as entry element Materials Science.
650 24 - ASIENTO SECUNDARIO DE MATERIA - TERMINO TEMÁTICO
Topical term or geographic name as entry element Optical and Electronic Materials.
650 24 - ASIENTO SECUNDARIO DE MATERIA - TERMINO TEMÁTICO
Topical term or geographic name as entry element Semiconductors.
650 24 - ASIENTO SECUNDARIO DE MATERIA - TERMINO TEMÁTICO
Topical term or geographic name as entry element Characterization and Evaluation of Materials.
650 24 - ASIENTO SECUNDARIO DE MATERIA - TERMINO TEMÁTICO
Topical term or geographic name as entry element Solid State Physics.
710 2# - ASIENTO SECUNDARIO - NOMBRE CORPORATIVO
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9783642163036
830 #0 - ASIENTO SECUNDARIO DE SERIE--TITULO UNIFORME
Uniform title Engineering Materials,
International Standard Serial Number 1612-1317
856 40 - LOCALIZACIÓN Y ACCESO ELECTRÓNICOS
Public note Libro electrónico
Uniform Resource Identifier <a href="http://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-3-642-16304-3">http://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-3-642-16304-3</a>
942 ## - TIPO DE MATERIAL (KOHA)
Koha item type Libro Electrónico
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    Colección de Libros Electrónicos Biblioteca Electrónica Biblioteca Electrónica     TA1750 -1750.22 375277-2001 12/08/2016 1 Libro Electrónico

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