Towards covalent organic framework field effect transistor (Registro nro. 273372)

MARC details
000 -LIDER
fixed length control field 01977nam a22002777a 4500
003 - CONTROL NUMBER IDENTIFIER
control field MX-MeUAM
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20260106114453.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 250516s2025 mx ado|go|||| 001 0 eng d
040 ## - CATALOGING SOURCE
Language of cataloging spa
Modifying agency MX-MeUAM
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number T174.7
Item number H47 2025
100 1# - MAIN ENTRY--PERSONAL NAME
9 (RLIN) 38354
Personal name Herrera Martínez, María Fernanda,
Dates associated with a name 1998-
Relator term aut.
245 ## - TITLE STATEMENT
Title Towards covalent organic framework field effect transistor
Medium [recurso electrónico] /
Remainder of title María Fernanda Herrera Martínez ; dirigida por Ramon Carrillo Bastos
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc. Ensenada, Baja California,
Date of publication, distribution, etc. 2025
300 ## - PHYSICAL DESCRIPTION
Extent 1 recurso en línea 66 p. :
Other physical details il. ; col. ; graf. : col. : fot. : col. :
500 ## - GENERAL NOTE
General note Maestría.
502 ## - DISSERTATION NOTE
Dissertation note Tesis (Maestría)--Universidad Autónoma de Baja California. Facultad de Ciencias, Ensenada, 2025
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Incluye referencias bibliográficas
520 ## - SUMMARY, ETC.
Summary, etc. The urge to make things smaller and more efficient in the world of advanced electronics has driven tremendous innovation in nanotechnology. A key technological advancement seen in nanotechnology is the use of field-effect transistors, which allow good control over electronic signals at a nanoscale level, underpinning the digital revolution. Although silicon is still the semiconductor of choice for these devices, there has been a growing interest in alternative materials as we approach the limits of Moore’s law. In this project, our aim is to create a field-effect transistor device composed of a two-dimensional Covalent triazine framework-1 material. These frameworks, if appropriately chemically engineered, can exhibit interesting electronic structure characteristics such as Dirac cones and flat bands.
650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM
Término temático o nombre geográfico como elemento de entrada Nanotecnología.
650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM
Término temático o nombre geográfico como elemento de entrada Nanotechnology.
650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM
Término temático o nombre geográfico como elemento de entrada Transistor de efecto de campo.
650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM
Término temático o nombre geográfico como elemento de entrada Field-effect Transistor
700 1# - ADDED ENTRY--PERSONAL NAME
9 (RLIN) 13402
Personal name Carrillo Bastos, Ramón
Relator term dir.
856 ## - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier https://drive.google.com/file/d/1octFCpVjNdrDQUq1HauANBGefJ9Wuv95/view?usp=drive_link
Public note Tesis Digital.
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Tesis
Existencias
Estado de retiro Fuente de clasificación Colección Ubicación permanente Ubicación actual Fecha de ingreso Precio Signatura topográfica Código de barras Date last seen Número de copia Tipo de material Categoría 2 de ítem Categoría 3 de ítem
    Colección de Tesis Biblioteca Central Ensenada Biblioteca Central Ensenada 16/05/2025 0.00 T174.7 H47 2025 ENS100663 16/05/2025 1 Tesis Material adquirido por Donación Maestría en Ciencias

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