Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces [recurso electrónico] / by Weronika Walkosz.

Por: Walkosz, Weronika [author.]Colaborador(es): SpringerLink (Online service)Tipo de material: Texto

TextoSeries Springer ThesesEditor: New York, NY : Springer New York, 2011Descripción: XIV, 110 p. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resourceISBN: 9781441978172Tema(s): Microreactors | Chemistry, Physical organic | Materials | Materials Science | Ceramics, Glass, Composites, Natural Methods | Spectroscopy and Microscopy | Physical Chemistry | Structural Materials | Atomic/Molecular Structure and Spectra | MicroengineeringFormatos físicos adicionales: Printed edition:: Sin títuloClasificación CDD: 620.14 Clasificación LoC:TP807-823TA418.9.C6Recursos en línea: Libro electrónico Texto

Contenidos:

Silicon Nitride Ceramics -- Theoretical Methods and Approximations -- Overview of Experimental Tools -- Structural Energetics of ß-Si3N4 (1010) Surfaces -- Atomic Resolution Study of the Interfacial Bonding at SI3N4/CEO2-? Grain Boundaries -- Atomic Resolution Study of ß-Si3N4/ SIO2 Interfaces -- Imagine Bulk a -SI3N4 -- Conclusions and Future Work -- Appendices -- Cited Literature.

En: Springer eBooksResumen: This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ß-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. This Doctoral Thesis has been accepted by the University of Illinois-Chicago, Chicago, USA.

Existencias ( 1 )
Notas de título ( 3 )

Existencias
Tipo de ítem	Biblioteca actual	Colección	Signatura	Copia número	Estado	Fecha de vencimiento	Código de barras
Libro Electrónico	Biblioteca Electrónica	Colección de Libros Electrónicos	TP807 -823 (Browse shelf(Abre debajo))	1	No para préstamo		372035-2001

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This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ß-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. This Doctoral Thesis has been accepted by the University of Illinois-Chicago, Chicago, USA.