Metastable States in Amorphous Chalcogenide Semiconductors [recurso electrónico] / by Victor I. Mikla, Victor I. Mikla.

Por: Mikla, Victor I [author.]Colaborador(es): Mikla, Victor I [author.] | SpringerLink (Online service)Tipo de material: TextoTextoSeries Springer Series in Materials Science ; 128Editor: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2010Descripción: XII, 122p. 120 illus., 60 illus. in color. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resourceISBN: 9783642027451Tema(s): Optical materials | Materials Science | Optical and Electronic Materials | Phase Transitions and Multiphase Systems | Optics, Optoelectronics, Plasmonics and Optical DevicesFormatos físicos adicionales: Printed edition:: Sin títuloClasificación CDD: 620.11295 | 620.11297 Clasificación LoC:TA1750-1750.22Recursos en línea: Libro electrónicoTexto
Contenidos:
Effect of Thermal Evaporation Conditions on Structure and Structural Changes in Amorphous Arsenic Sulfides -- Optical Absorption and Structural Transformations in Arsenic Selenide Films -- Trap Level Spectroscopy in Amorphous Selenium-Based Semiconductors -- Photoinduced Effects on Electronic Metastable States -- Deep Level Spectroscopy in Selenium-Rich Amorphous Semiconductors -- Recombination Process and Non-Isothermal Relaxation of Low-Temperature Photoinduced Effects -- Electronic Properties of Materials with Gross Permanent Photoinduced Changes: Cu–As–Se Glasses -- Carrier Transport in Selenium-Based Amorphous Multilayer Structures -- Spectroscopic Studies of Gap States and Laser-Induced Structural Transformations in Selenium-Based Arsenic-Free Amorphous Semiconductors: Sb x Se1?x Alloys.
En: Springer eBooksResumen: This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of the observed effects in xerography, digital radiography and for optical data storage.
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Tipo de ítem Biblioteca actual Colección Signatura Copia número Estado Fecha de vencimiento Código de barras
Libro Electrónico Biblioteca Electrónica
Colección de Libros Electrónicos TA1750 -1750.22 (Browse shelf(Abre debajo)) 1 No para préstamo 373468-2001

Effect of Thermal Evaporation Conditions on Structure and Structural Changes in Amorphous Arsenic Sulfides -- Optical Absorption and Structural Transformations in Arsenic Selenide Films -- Trap Level Spectroscopy in Amorphous Selenium-Based Semiconductors -- Photoinduced Effects on Electronic Metastable States -- Deep Level Spectroscopy in Selenium-Rich Amorphous Semiconductors -- Recombination Process and Non-Isothermal Relaxation of Low-Temperature Photoinduced Effects -- Electronic Properties of Materials with Gross Permanent Photoinduced Changes: Cu–As–Se Glasses -- Carrier Transport in Selenium-Based Amorphous Multilayer Structures -- Spectroscopic Studies of Gap States and Laser-Induced Structural Transformations in Selenium-Based Arsenic-Free Amorphous Semiconductors: Sb x Se1?x Alloys.

This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of the observed effects in xerography, digital radiography and for optical data storage.

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