Semiconductor Power Devices [recurso electrónico] : Physics, Characteristics, Reliability / by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker.

Por: Lutz, Josef [author.]Colaborador(es): Schlangenotto, Heinrich [author.] | Scheuermann, Uwe [author.] | De Doncker, Rik [author.] | SpringerLink (Online service)Tipo de material: TextoTextoEditor: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2011Descripción: X, 608p. 250 illus. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resourceISBN: 9783642111259Tema(s): Engineering | Electronics | Production of electric energy or power | Engineering | Electronics and Microelectronics, Instrumentation | Power Electronics, Electrical Machines and Networks | Condensed Matter PhysicsFormatos físicos adicionales: Printed edition:: Sin títuloClasificación CDD: 621.381 Clasificación LoC:TK7800-8360TK7874-7874.9Recursos en línea: Libro electrónicoTexto
Contenidos:
Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn - Junctions -- Short introduction to power device technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device Induced Oscillations and Electromagnetic Disturbances -- Power Electronic Systems -- Appendix -- Index.
En: Springer eBooksResumen: Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
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Existencias
Tipo de ítem Biblioteca actual Colección Signatura Copia número Estado Fecha de vencimiento Código de barras
Libro Electrónico Biblioteca Electrónica
Colección de Libros Electrónicos TK7800 -8360 (Browse shelf(Abre debajo)) 1 No para préstamo 373946-2001

Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn - Junctions -- Short introduction to power device technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device Induced Oscillations and Electromagnetic Disturbances -- Power Electronic Systems -- Appendix -- Index.

Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.

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