Rare-Earth Implanted MOS Devices for Silicon Photonics [recurso electrónico] : Microstructural, Electrical and Optoelectronic Properties / by Lars Rebohle, Wolfgang Skorupa.
Tipo de material: TextoSeries Springer Series in Materials Science ; 142Editor: Berlin, Heidelberg : Springer Berlin Heidelberg, 2010Descripción: XVIII, 174 p. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resourceISBN: 9783642144479Tema(s): Optical materials | Materials Science | Optical and Electronic MaterialsFormatos físicos adicionales: Printed edition:: Sin títuloClasificación CDD: 620.11295 | 620.11297 Clasificación LoC:TA1750-1750.22Recursos en línea: Libro electrónicoTipo de ítem | Biblioteca actual | Colección | Signatura | Copia número | Estado | Fecha de vencimiento | Código de barras |
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Libro Electrónico | Biblioteca Electrónica | Colección de Libros Electrónicos | TA1750 -1750.22 (Browse shelf(Abre debajo)) | 1 | No para préstamo | 374765-2001 |
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TA1750 -1750.22 Metastable States in Amorphous Chalcogenide Semiconductors | TA1750 -1750.22 Electronic Structure of Strongly Correlated Materials | TA1750 -1750.22 Zinc Oxide | TA1750 -1750.22 Rare-Earth Implanted MOS Devices for Silicon Photonics | TA1750 -1750.22 Nanostructure Semiconductor Optical Amplifiers | TA1750 -1750.22 Terahertz Technology | TA1750 -1750.22 Transport in Metal-Oxide-Semiconductor Structures |
Silicon-Based Light Emission -- Microstructure -- Electrical Properties -- Electroluminescence Spectra -- Electroluminescence Efficiency -- Stability and Degradation -- Applications.
The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.
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