Low Power and Reliable SRAM Memory Cell and Array Design [recurso electrónico] / edited by Koichiro Ishibashi, Kenichi Osada.
Tipo de material:
TextoSeries Springer Series in Advanced Microelectronics ; 31Editor: Berlin, Heidelberg : Springer Berlin Heidelberg, 2011Descripción: XII, 144 p. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resourceISBN: 9783642195686Tema(s): Engineering | Electronics | Engineering | Electronics and Microelectronics, Instrumentation | Engineering, generalFormatos físicos adicionales: Printed edition:: Sin títuloClasificación CDD: 621.381 Clasificación LoC:TK7800-8360TK7874-7874.9Recursos en línea: Libro electrónico
Contenidos:
En: Springer eBooksResumen: Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
| Tipo de ítem | Biblioteca actual | Colección | Signatura | Copia número | Estado | Fecha de vencimiento | Código de barras |
|---|---|---|---|---|---|---|---|
| Libro Electrónico | Biblioteca Electrónica | Colección de Libros Electrónicos | TK7800 -8360 (Browse shelf(Abre debajo)) | 1 | No para préstamo | 375876-2001 |
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| TK7800 -8360 Embedded Microcontroller Interfacing | TK7800 -8360 Wearable and Autonomous Biomedical Devices and Systems for Smart Environment | TK7800 -8360 Advanced Microsystems for Automotive Applications 2010 | TK7800 -8360 Low Power and Reliable SRAM Memory Cell and Array Design | TK7800 -8360 Robotic Welding, Intelligence and Automation | TK7800 -8360 Broadband Reflectometry for Enhanced Diagnostics and Monitoring Applications | TK7800 -8360 Electronics and Signal Processing |
Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
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