TY  - BOOK
AU  - Bentarzi,Hamid
ED  - SpringerLink (Online service)
TI  - Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties 
T2  - Engineering Materials,
SN  - 9783642163043
AV  - TA1750-1750.22 
U1  - 620.11295 23
PY  - 2011///
CY  - Berlin, Heidelberg
PB  - Springer Berlin Heidelberg
KW  - Optical materials
KW  - Surfaces (Physics)
KW  - Materials Science
KW  - Optical and Electronic Materials
KW  - Semiconductors
KW  - Characterization and Evaluation of Materials
KW  - Solid State Physics
N1  - Introduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide
N2  - This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures
UR  - http://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-3-642-16304-3
ER  -