TY  - BOOK
AU  - Sverdlov,Viktor
ED  - SpringerLink (Online service)
TI  - Strain-Induced Effects in Advanced MOSFETs
T2  - Computational Microelectronics,
SN  - 9783709103821
AV  - TK7800-8360 
U1  - 621.381 23
PY  - 2011///
CY  - Vienna
PB  - Springer Vienna, Imprint: Springer
KW  - Engineering
KW  - Electronics
KW  - Electronics and Microelectronics, Instrumentation
N2  - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
UR  - http://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-3-7091-0382-1
ER  -