TY  - BOOK
AU  - Zhang,Lining
AU  - Chan,Mansun
ED  - SpringerLink (Online service)
TI  - Tunneling Field Effect Transistor Technology
SN  - 9783319316536
AV  - TK7888.4 
U1  - 621.3815 23
PY  - 2016///
CY  - Cham
PB  - Springer International Publishing, Imprint: Springer
KW  - Engineering
KW  - Electronic circuits
KW  - Electronics
KW  - Microelectronics
KW  - Circuits and Systems
KW  - Electronic Circuits and Devices
KW  - Electronics and Microelectronics, Instrumentation
N1  - Steep Slope Devices and TFETs -- Tunnel-FET Fabrication and Characterization -- Compact Models of TFETs -- Challenges and Designs of TFET for Digital Applications -- Atomistic Simulations of Tunneling FETs -- Quantum Transport Simulation of III-V TFETs with Reduced-Order k ·p Method -- Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation
N2  - This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs
UR  - http://148.231.10.114:2048/login?url=http://dx.doi.org/10.1007/978-3-319-31653-6
ER  -