000 | 01195cam a2200325 a 4500 | ||
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001 | u320959 | ||
003 | SIRSI | ||
005 | 20160812064302.0 | ||
008 | 980513s1999 enka fr 001 0 eng c | ||
035 | _9(DLC) 98022030 | ||
020 | _a9780471976448 | ||
020 | _a047197644X | ||
040 |
_aDLC _cDLC _dDLC |
||
041 | 1 |
_aeng _hcze |
|
050 | 0 |
_aTK7871.85 _bB4513 1999 |
|
100 | 1 | _aBenda, Vítezslav. | |
245 | 1 | 0 |
_aPower semiconductor devices : _btheory and applications / _cVítezslav Benda, John Gowar, Duncan A. Grant. |
260 |
_aChichester ; _aNew York : _bWiley, _cc1999. |
||
300 |
_axii, 419 p. : _bil. ; _c25 cm. |
||
500 | _aTraducción de: Výkonové polovodicové soucátsky a integrované struktury. | ||
504 | _aIncluye referencias bibliográficas e índice. | ||
650 | 7 |
_aSemiconductores de potencia. _2lemb |
|
650 | 0 | _aPower semiconductors. | |
700 | 1 |
_aGowar, John, _d1945-, _ecoaut. |
|
700 | 1 |
_aGrant, Duncan A. _q(Duncan Andrew), _ecoaut. |
|
856 | 4 | 2 |
_3Publisher description _uhttp://www.loc.gov/catdir/description/wiley0310/98022030.html |
856 | 4 |
_3Table of Contents _uhttp://www.loc.gov/catdir/toc/onix04/98022030.html |
|
596 | _a2 | ||
942 | _cLIBRO | ||
999 |
_c162455 _d162455 |