000 | 03104nam a22004935i 4500 | ||
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001 | u371135 | ||
003 | SIRSI | ||
005 | 20160812080111.0 | ||
007 | cr nn 008mamaa | ||
008 | 100301s2010 xxu| s |||| 0|eng d | ||
020 |
_a9781441905529 _9978-1-4419-0552-9 |
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040 | _cMX-MeUAM | ||
050 | 4 | _aTK7800-8360 | |
050 | 4 | _aTK7874-7874.9 | |
082 | 0 | 4 |
_a621.381 _223 |
100 | 1 |
_aSun, Yongke. _eauthor. |
|
245 | 1 | 0 |
_aStrain Effect in Semiconductors _h[recurso electrónico] : _bTheory and Device Applications / _cby Yongke Sun, Scott E. Thompson, Toshikazu Nishida. |
250 | _aFirst. | ||
264 | 1 |
_aBoston, MA : _bSpringer US, _c2010. |
|
300 |
_aXII, 350 p. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
||
338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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505 | 0 | _aOverview: The Age of Strained Devices -- Band Structures of Strained Semiconductors -- Stress, Strain, Piezoresistivity, and Piezoelectricity -- Strain and Semiconductor Crystal Symmetry -- Band Structures of Strained Semiconductors -- Low-Dimensional Semiconductor Structures -- Transport Theory of Strained Semiconductors -- Semiconductor Transport -- Strain in Semiconductor Devices -- Strain in Electron Devices -- Piezoresistive Strain Sensors -- Strain Effects on Optoelectronic Devices. | |
520 | _aStrain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also: Treat strain physics at both the qualitative overview level as well as provide detailed fundamentals Explain strain physics relevant to logic devices as well as strain-based MEMS This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. It is perfect for practicing device engineers at semiconductor manufacturers, as well as graduate students studying device physics at universities. | ||
650 | 0 | _aEngineering. | |
650 | 0 | _aElectronics. | |
650 | 0 | _aOptical materials. | |
650 | 1 | 4 | _aEngineering. |
650 | 2 | 4 | _aElectronics and Microelectronics, Instrumentation. |
650 | 2 | 4 | _aSolid State Physics. |
650 | 2 | 4 | _aSpectroscopy and Microscopy. |
650 | 2 | 4 | _aOptical and Electronic Materials. |
700 | 1 |
_aThompson, Scott E. _eauthor. |
|
700 | 1 |
_aNishida, Toshikazu. _eauthor. |
|
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9781441905512 |
856 | 4 | 0 |
_zLibro electrónico _uhttp://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-1-4419-0552-9 |
596 | _a19 | ||
942 | _cLIBRO_ELEC | ||
999 |
_c199015 _d199015 |