000			03927nam a22004575i 4500
001			u371374
003			SIRSI
005			20160812080125.0
007			cr nn 008mamaa
008			100316s2010 xxu| s |||| 0|eng d
020			_a9781441915474 _9978-1-4419-1547-4
040			_cMX-MeUAM
050		4	_aTK7888.4
082	0	4	_a621.3815 _223
100	1		_aOktyabrsky, Serge. _eeditor.
245	1	0	_aFundamentals of III-V Semiconductor MOSFETs _h[recurso electrónico] / _cedited by Serge Oktyabrsky, Peide Ye.
264		1	_aBoston, MA : _bSpringer US : _bImprint: Springer, _c2010.
300			_aXVI, 480p. 200 illus., 100 illus. in color. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aNon-Silicon MOSFET Technology: A Long Time Coming -- Properties and Trade-Offs of Compound Semiconductor MOSFETs -- Device Physics and Performance Potential of III-V Field-Effect Transistors -- Theory of HfO2-Based High-k Dielectric Gate Stacks -- Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors -- Interfacial Chemistry of Oxides on III-V Compound Semiconductors -- Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model -- Materials and Technologies for III-V MOSFETs -- InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS -- Sub-100 nm Gate III-V MOSFET for Digital Applications -- Electrical and Material Characteristics of Hafnium Oxide with Silicon Interface Passivation on III-V Substrate for Future Scaled CMOS Technology -- p-type Channel Field-Effect Transistors -- Insulated Gate Nitride-Based Field Effect Transistors -- Technology/Circuit Co-Design for III-V FETs.
520			_aFundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
650		0	_aEngineering.
650		0	_aSystems engineering.
650		0	_aOptical materials.
650	1	4	_aEngineering.
650	2	4	_aCircuits and Systems.
650	2	4	_aSolid State Physics.
650	2	4	_aSpectroscopy and Microscopy.
650	2	4	_aOptical and Electronic Materials.
700	1		_aYe, Peide. _eeditor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9781441915467
856	4	0	_zLibro electrónico _uhttp://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-1-4419-1547-4
596			_a19
942			_cLIBRO_ELEC
999			_c199254 _d199254