000 | 03191nam a22004575i 4500 | ||
---|---|---|---|
001 | u373468 | ||
003 | SIRSI | ||
005 | 20160812084147.0 | ||
007 | cr nn 008mamaa | ||
008 | 100301s2010 gw | s |||| 0|eng d | ||
020 |
_a9783642027451 _9978-3-642-02745-1 |
||
040 | _cMX-MeUAM | ||
050 | 4 | _aTA1750-1750.22 | |
082 | 0 | 4 |
_a620.11295 _223 |
082 | 0 | 4 |
_a620.11297 _223 |
100 | 1 |
_aMikla, Victor I. _eauthor. |
|
245 | 1 | 0 |
_aMetastable States in Amorphous Chalcogenide Semiconductors _h[recurso electrónico] / _cby Victor I. Mikla, Victor I. Mikla. |
264 | 1 |
_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg : _bImprint: Springer, _c2010. |
|
300 |
_aXII, 122p. 120 illus., 60 illus. in color. _bonline resource. |
||
336 |
_atext _btxt _2rdacontent |
||
337 |
_acomputer _bc _2rdamedia |
||
338 |
_aonline resource _bcr _2rdacarrier |
||
347 |
_atext file _bPDF _2rda |
||
490 | 1 |
_aSpringer Series in Materials Science, _x0933-033X ; _v128 |
|
505 | 0 | _aEffect of Thermal Evaporation Conditions on Structure and Structural Changes in Amorphous Arsenic Sulfides -- Optical Absorption and Structural Transformations in Arsenic Selenide Films -- Trap Level Spectroscopy in Amorphous Selenium-Based Semiconductors -- Photoinduced Effects on Electronic Metastable States -- Deep Level Spectroscopy in Selenium-Rich Amorphous Semiconductors -- Recombination Process and Non-Isothermal Relaxation of Low-Temperature Photoinduced Effects -- Electronic Properties of Materials with Gross Permanent Photoinduced Changes: Cu–As–Se Glasses -- Carrier Transport in Selenium-Based Amorphous Multilayer Structures -- Spectroscopic Studies of Gap States and Laser-Induced Structural Transformations in Selenium-Based Arsenic-Free Amorphous Semiconductors: Sb x Se1?x Alloys. | |
520 | _aThis book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of the observed effects in xerography, digital radiography and for optical data storage. | ||
650 | 0 | _aOptical materials. | |
650 | 1 | 4 | _aMaterials Science. |
650 | 2 | 4 | _aOptical and Electronic Materials. |
650 | 2 | 4 | _aPhase Transitions and Multiphase Systems. |
650 | 2 | 4 | _aOptics, Optoelectronics, Plasmonics and Optical Devices. |
700 | 1 |
_aMikla, Victor I. _eauthor. |
|
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9783642027444 |
830 | 0 |
_aSpringer Series in Materials Science, _x0933-033X ; _v128 |
|
856 | 4 | 0 |
_zLibro electrónico _uhttp://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-3-642-02745-1 |
596 | _a19 | ||
942 | _cLIBRO_ELEC | ||
999 |
_c201348 _d201348 |