000			02259nam a22004575i 4500
001			u375876
003			SIRSI
005			20160812084345.0
007			cr nn 008mamaa
008			110816s2011 gw | s |||| 0|eng d
020			_a9783642195686 _9978-3-642-19568-6
040			_cMX-MeUAM
050		4	_aTK7800-8360
050		4	_aTK7874-7874.9
082	0	4	_a621.381 _223
100	1		_aIshibashi, Koichiro. _eeditor.
245	1	0	_aLow Power and Reliable SRAM Memory Cell and Array Design _h[recurso electrónico] / _cedited by Koichiro Ishibashi, Kenichi Osada.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2011.
300			_aXII, 144 p. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aSpringer Series in Advanced Microelectronics, _x1437-0387 ; _v31
505	0		_aPreface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
520			_aSuccess in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
650		0	_aEngineering.
650		0	_aElectronics.
650	1	4	_aEngineering.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
650	2	4	_aEngineering, general.
700	1		_aOsada, Kenichi. _eeditor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783642195679
830		0	_aSpringer Series in Advanced Microelectronics, _x1437-0387 ; _v31
856	4	0	_zLibro electrónico _uhttp://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-3-642-19568-6
596			_a19
942			_cLIBRO_ELEC
999			_c203756 _d203756