000 | 01897nam a22004215i 4500 | ||
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001 | u376978 | ||
003 | SIRSI | ||
005 | 20160812084440.0 | ||
007 | cr nn 008mamaa | ||
008 | 110106s2011 au | s |||| 0|eng d | ||
020 |
_a9783709103821 _9978-3-7091-0382-1 |
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040 | _cMX-MeUAM | ||
050 | 4 | _aTK7800-8360 | |
050 | 4 | _aTK7874-7874.9 | |
082 | 0 | 4 |
_a621.381 _223 |
100 | 1 |
_aSverdlov, Viktor. _eauthor. |
|
245 | 1 | 0 |
_aStrain-Induced Effects in Advanced MOSFETs _h[recurso electrónico] / _cby Viktor Sverdlov. |
264 | 1 |
_aVienna : _bSpringer Vienna : _bImprint: Springer, _c2011. |
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300 |
_aXIV, 252p. 101 illus. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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490 | 1 |
_aComputational Microelectronics, _x0179-0307 |
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520 | _aStrain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given | ||
650 | 0 | _aEngineering. | |
650 | 0 | _aElectronics. | |
650 | 1 | 4 | _aEngineering. |
650 | 2 | 4 | _aElectronics and Microelectronics, Instrumentation. |
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9783709103814 |
830 | 0 |
_aComputational Microelectronics, _x0179-0307 |
|
856 | 4 | 0 |
_zLibro electrónico _uhttp://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-3-7091-0382-1 |
596 | _a19 | ||
942 | _cLIBRO_ELEC | ||
999 |
_c204858 _d204858 |