000			01897nam a22004215i 4500
001			u376978
003			SIRSI
005			20160812084440.0
007			cr nn 008mamaa
008			110106s2011 au | s |||| 0|eng d
020			_a9783709103821 _9978-3-7091-0382-1
040			_cMX-MeUAM
050		4	_aTK7800-8360
050		4	_aTK7874-7874.9
082	0	4	_a621.381 _223
100	1		_aSverdlov, Viktor. _eauthor.
245	1	0	_aStrain-Induced Effects in Advanced MOSFETs _h[recurso electrónico] / _cby Viktor Sverdlov.
264		1	_aVienna : _bSpringer Vienna : _bImprint: Springer, _c2011.
300			_aXIV, 252p. 101 illus. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aComputational Microelectronics, _x0179-0307
520			_aStrain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
650		0	_aEngineering.
650		0	_aElectronics.
650	1	4	_aEngineering.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783709103814
830		0	_aComputational Microelectronics, _x0179-0307
856	4	0	_zLibro electrónico _uhttp://148.231.10.114:2048/login?url=http://link.springer.com/book/10.1007/978-3-7091-0382-1
596			_a19
942			_cLIBRO_ELEC
999			_c204858 _d204858