000 04117nam a22006135i 4500
001 978-3-319-70917-8
003 DE-He213
005 20210201191457.0
007 cr nn 008mamaa
008 180216s2018 gw | s |||| 0|eng d
020 _a9783319709178
_9978-3-319-70917-8
050 4 _aTK7888.4
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
072 7 _aTJFC
_2thema
082 0 4 _a621.3815
_223
100 1 _aLutz, Josef.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
245 1 0 _aSemiconductor Power Devices
_h[electronic resource] :
_bPhysics, Characteristics, Reliability /
_cby Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker.
250 _a2nd ed. 2018.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2018.
300 _aXIX, 714 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
500 _aAcceso multiusuario
505 0 _aPower Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.
520 _aThis book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
541 _fUABC ;
_cTemporal ;
_d01/01/2021-12/31/2023.
650 0 _aElectronic circuits.
650 0 _aPower electronics.
650 0 _aEnergy systems.
650 0 _aElectronics.
650 0 _aMicroelectronics.
650 1 4 _aCircuits and Systems.
_0https://scigraph.springernature.com/ontologies/product-market-codes/T24068
650 2 4 _aPower Electronics, Electrical Machines and Networks.
_0https://scigraph.springernature.com/ontologies/product-market-codes/T24070
650 2 4 _aEnergy Systems.
_0https://scigraph.springernature.com/ontologies/product-market-codes/115000
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_0https://scigraph.springernature.com/ontologies/product-market-codes/T24027
700 1 _aSchlangenotto, Heinrich.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
700 1 _aScheuermann, Uwe.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
700 1 _aDe Doncker, Rik.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
710 2 _aSpringerLink (Online service)
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783319709161
776 0 8 _iPrinted edition:
_z9783319709185
776 0 8 _iPrinted edition:
_z9783319890111
856 4 0 _zLibro electrónico
_uhttp://148.231.10.114:2048/login?url=https://doi.org/10.1007/978-3-319-70917-8
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cLIBRO_ELEC
999 _c243908
_d243907