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082 0 4 _a621.3815
_223
100 1 _aAdhikary, Sourav.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
245 1 0 _aQuaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors
_h[electronic resource] :
_bFrom Materials to Devices /
_cby Sourav Adhikary, Subhananda Chakrabarti.
250 _a1st ed. 2018.
264 1 _aSingapore :
_bSpringer Singapore :
_bImprint: Springer,
_c2018.
300 _aXIII, 63 p. 35 illus., 16 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
500 _aAcceso multiusuario
505 0 _aChapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work.
520 _aThis book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and  responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
541 _fUABC ;
_cTemporal ;
_d01/01/2021-12/31/2023.
650 0 _aElectronic circuits.
650 0 _aLasers.
650 0 _aPhotonics.
650 0 _aSignal processing.
650 0 _aImage processing.
650 0 _aSpeech processing systems.
650 1 4 _aCircuits and Systems.
_0https://scigraph.springernature.com/ontologies/product-market-codes/T24068
650 2 4 _aElectronic Circuits and Devices.
_0https://scigraph.springernature.com/ontologies/product-market-codes/P31010
650 2 4 _aOptics, Lasers, Photonics, Optical Devices.
_0https://scigraph.springernature.com/ontologies/product-market-codes/P31030
650 2 4 _aSignal, Image and Speech Processing.
_0https://scigraph.springernature.com/ontologies/product-market-codes/T24051
700 1 _aChakrabarti, Subhananda.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
710 2 _aSpringerLink (Online service)
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9789811052897
776 0 8 _iPrinted edition:
_z9789811052910
776 0 8 _iPrinted edition:
_z9789811353604
856 4 0 _zLibro electrónico
_uhttp://148.231.10.114:2048/login?url=https://doi.org/10.1007/978-981-10-5290-3
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cLIBRO_ELEC
999 _c244675
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