000			01977nam a22002777a 4500
003			MX-MeUAM
005			20260106114453.0
008			250516s2025 mx ado|go|||| 001 0 eng d
040			_bspa _dMX-MeUAM
050		4	_aT174.7 _bH47 2025
100	1		_938354 _aHerrera Martínez, María Fernanda, _d1998- _eaut.
245			_aTowards covalent organic framework field effect transistor _h[recurso electrónico] / _bMaría Fernanda Herrera Martínez ; dirigida por Ramon Carrillo Bastos
260			_aEnsenada, Baja California, _c2025
300			_a1 recurso en línea 66 p. : _bil. ; col. ; graf. : col. : fot. : col. :
500			_aMaestría.
502			_aTesis (Maestría)--Universidad Autónoma de Baja California. Facultad de Ciencias, Ensenada, 2025
504			_aIncluye referencias bibliográficas
520			_aThe urge to make things smaller and more efficient in the world of advanced electronics has driven tremendous innovation in nanotechnology. A key technological advancement seen in nanotechnology is the use of field-effect transistors, which allow good control over electronic signals at a nanoscale level, underpinning the digital revolution. Although silicon is still the semiconductor of choice for these devices, there has been a growing interest in alternative materials as we approach the limits of Moore’s law. In this project, our aim is to create a field-effect transistor device composed of a two-dimensional Covalent triazine framework-1 material. These frameworks, if appropriately chemically engineered, can exhibit interesting electronic structure characteristics such as Dirac cones and flat bands.
650		4	_aNanotecnología.
650		4	_aNanotechnology.
650		4	_aTransistor de efecto de campo.
650		4	_aField-effect Transistor
700	1		_913402 _aCarrillo Bastos, Ramón _edir.
856			_uhttps://drive.google.com/file/d/1octFCpVjNdrDQUq1HauANBGefJ9Wuv95/view?usp=drive_link _zTesis Digital.
942			_cTESIS
999			_c273372 _d273371