Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

Cheng, Jie.

Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect [electronic resource] / by Jie Cheng. - 1st ed. 2018. - XVIII, 137 p. 103 illus. online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053 . - Springer Theses, Recognizing Outstanding Ph.D. Research, .

Acceso multiusuario

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

9789811061653


Manufactures.
Tribology.
Corrosion and anti-corrosives.
Coatings.
Electronics.
Microelectronics.
Manufacturing, Machines, Tools, Processes.
Tribology, Corrosion and Coatings.
Electronics and Microelectronics, Instrumentation.

TS1-2301

670

Con tecnología Koha