Transport in Metal-Oxide-Semiconductor Structures [recurso electrónico] : Mobile Ions Effects on the Oxide Properties / by Hamid Bentarzi.

Por: Bentarzi, Hamid [author.]Colaborador(es): SpringerLink (Online service)Tipo de material: Texto

TextoSeries Engineering MaterialsEditor: Berlin, Heidelberg : Springer Berlin Heidelberg, 2011Descripción: XIV, 106 p. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resourceISBN: 9783642163043Tema(s): Optical materials | Surfaces (Physics) | Materials Science | Optical and Electronic Materials | Semiconductors | Characterization and Evaluation of Materials | Solid State PhysicsFormatos físicos adicionales: Printed edition:: Sin títuloClasificación CDD: 620.11295 | 620.11297 Clasificación LoC:TA1750-1750.22Recursos en línea: Libro electrónico Texto

Contenidos:

Introduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide.

En: Springer eBooksResumen: This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Existencias ( 1 )
Notas de título ( 3 )

Existencias
Tipo de ítem	Biblioteca actual	Colección	Signatura	Copia número	Estado	Fecha de vencimiento	Código de barras
Libro Electrónico	Biblioteca Electrónica	Colección de Libros Electrónicos	TA1750 -1750.22 (Browse shelf(Abre debajo))	1	No para préstamo		375277-2001

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This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.