Strain-Induced Effects in Advanced MOSFETs [recurso electrónico] / by Viktor Sverdlov.
Tipo de material:
TextoSeries Computational MicroelectronicsEditor: Vienna : Springer Vienna : Imprint: Springer, 2011Descripción: XIV, 252p. 101 illus. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resourceISBN: 9783709103821Tema(s): Engineering | Electronics | Engineering | Electronics and Microelectronics, InstrumentationFormatos físicos adicionales: Printed edition:: Sin títuloClasificación CDD: 621.381 Clasificación LoC:TK7800-8360TK7874-7874.9Recursos en línea: Libro electrónico
En: Springer eBooksResumen: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
| Tipo de ítem | Biblioteca actual | Colección | Signatura | Copia número | Estado | Fecha de vencimiento | Código de barras |
|---|---|---|---|---|---|---|---|
| Libro Electrónico | Biblioteca Electrónica | Colección de Libros Electrónicos | TK7800 -8360 (Browse shelf(Abre debajo)) | 1 | No para préstamo | 376978-2001 |
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
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